Stopad cracked crack#A semiconductor device, comprising: an integrated circuit, the integrated circuit having a peripheral region proximate an edge of the integrated circuit and a barrier structure forming an integrated moisture barrier and crack stop, disposed on the peripheral region of the integrated circuit, the barrier structure comprising a plurality of discrete conductive features, wherein a length of the discrete conductive features is larger than a width or a height of the discrete conductive features, wherein the discrete conductive features of the barrier structure are arranged along the length in a plurality of parallel rows in a plane disposed parallel to a top surface of the semiconductor device, wherein the discrete conductive features are discrete along the length, and wherein the discrete conductive features in adjacent parallel rows are staggered. A semiconductor device, comprising: an integrated circuit, the integrated circuit having a peripheral region proximate an edge of the integrated circuit and a barrier structure forming an integrated moisture barrier and crack stop, disposed on the peripheral region of the integrated circuit, the barrier structure comprising a plurality of discrete conductive features, wherein a length of the discrete conductive features is larger than a width or a height of the discrete conductive features, wherein the discrete conductive feature.
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